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Infineon | IPD15N06S2L64ATMA2

Manufacturer Part #

IPD15N06S2L64ATMA2

N-Channel 55 V 64 mOhm 13 nC OptiMOS Enhancement Mode Power-Transistor-TO-252

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2526
Product Specification Section
Infineon IPD15N06S2L64ATMA2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 64mΩ
Rated Power Dissipation: 47W
Qg Gate Charge: 13nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 19A
Turn-on Delay Time: 4ns
Turn-off Delay Time: 21ns
Rise Time: 14ns
Fall Time: 12ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2V
Technology: Si
Height - Max: 2.3mm
Length: 6.5mm
Input Capacitance: 354pF
Package Style:  PG-TO-252-3-11
Mounting Method: Surface Mount
Pricing Section
Global Stock:
2,500
USA:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$862.50
USD
Quantity
Unit Price
2,500
$0.345
7,500
$0.34
12,500+
$0.335
Product Variant Information section