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Codice produttore
SI3483DDV-T1-GE3
Single P-Channel 30 V 31.2 mOhm Surface Mount TrenchFET® Power Mosfet - TSOP-6
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| Fabbricante: | Vishay | ||||||||||
| Confezione Standard: | Product Variant Information section Pacchetti disponibiliQ.tà confezione:3000 per Reel Tipologia confezione:SC-74 (TSOP-6) Metodo di montaggio:Surface Mount | ||||||||||
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Vishay SI3483DDV-T1-GE3 - Specifiche del Prodotto
Informazioni sulla spedizione:
ECCN:
Informazioni PCN:
Description of Change: To meet the increasing demand for commercial Power MOSFET products, Vishay Siliconix announces the qualification of wafer BGBM process (Backside-Grind and Backside-Metallization) for commercial Low-Voltage Power MOSFETs at in-house Siliconix Philippines Inc.(SPI) facility in Binan, Philippines.Reason for Change: Capacity Expansion
Description of Change: Due to the fire accident in Jan-2023, the original plating subcon of Vishay Siliconix, Welnew-Wuxi, is suspended and will be entirely replaced by the new site in Shanghai, China (Welnew-Shanghai). This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai. Welnew-Shanghai was founded in 2006 as a leading provider of Hall sensor products, semiconductor process service, and equipments. Welnew-Shanghai has achieved the certifications, including IATF-16949, ISO-9001, and ISO-14001.Expected Influence on Quality/Reliability/Performance: There will be no effect on quality, reliability, performance, and the minimum/maximum values in the datasheet.Time Schedule:Start Shipment Date: Wed Jul 5, 2023
PCN UPDATE - FPCN 95348Potential delivery interruption for the selected Power MOSFETs due to the fire accident at Welnew Wuxi factory and the adoption of the alternative site in Vishay Tianjin.Description of Change: This advisory is being provided to you as an announcement that due to the fire accident on 2023/1/6 afternoon at Welnew Wuxi factory (China), the plating subcon of Vishay Siliconix, it?s expected the delivery interruption on specific part types, including TSOP-6, TO-236 (SOT-23), SO-8, PowerPAK 1212-8, Thin PowerPAK 1212-8, PowerPAK SO-8, and 1206-8 ChipFET. The detail part list of each package is attached in the following pages of this advisory.Currently all the production activities in Welnew Wuxi plant have been suspended. Vishay Siliconix is cooperating closely with Welnew to restart the alternative production line in Welnew Shanghai. The necessary equipment setup and qualification is estimated to take up to 5 months to get completed and ready for the normal production in May, 2023.During this period, we expect the delivery interruptions in January and February while these could be caught up by the end of March this year based on current assessment status. Before Welnew Shanghai being ready for production, Vishay Tianjin plant will offer the support as the alternative backup plating site to minimize the impact as more as possible.All the migration plans are kick off and on-going already, including the restart of Welnew Shanghai plant and the alternative plating process inVishay Tianjin plant.
This advisory is being provided to you as an announcement that due to the fire accident on 2023/1/6 afternoon at Welnew Wuxi factory (China), the plating subcon of Vishay Siliconix, it's expected the delivery interruption on specific part types, including TSOP-6, TO-236 (SOT-23), SO-8, PowerPAK 1212-8, Thin PowerPAK 1212-8, PowerPAK SO-8, and 1206-8 ChipFET.Currently all the production activities in Welnew Wuxi plant have been suspended. Vishay Siliconix is cooperating closely with Welnew to restart the alternative production line in Welnew Shanghai. The necessary equipment setup and qualification is estimated to take up to 5 months to get completed and ready for the normal production in May, 2023.
Stato del Prodotto:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=EU&field16=it&field2=SI3483DDV-T1-GE3&field4=Vishay&field18=https://p1emea.futureelectronics.com/it/p/semiconductors--discretes--transistors--mosfets/si3483ddv-t1-ge3-vishay-5121849
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=EU&field16=it&field2=SI3483DDV-T1-GE3&field4=Vishay&field18=https://p1emea.futureelectronics.com/it/p/semiconductors--discretes--transistors--mosfets/si3483ddv-t1-ge3-vishay-5121849
Vishay SI3483DDV-T1-GE3 - Caratteristiche Tecniche
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 31.2mΩ |
| Rated Power Dissipation: | 2W |
| Qg Gate Charge: | 9.5nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 6.4A |
| Turn-on Delay Time: | 15ns |
| Turn-off Delay Time: | 30ns |
| Rise Time: | 33ns |
| Fall Time: | 40ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 2.2V |
| Input Capacitance: | 580pF |
| Tipologia confezione: | SC-74 (TSOP-6) |
| Metodo di montaggio: | Surface Mount |
Pacchetti disponibili
Q.tà confezione:
3000 per Reel
Tipologia confezione:
SC-74 (TSOP-6)
Metodo di montaggio:
Surface Mount