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Vishay

 

Vishay SiDR570EP N‑Channel 150 V MOSFET, High-Performance & Reliable

Low on-resistance, excellent switching performance, and board-level reliability for demanding power applications

The SiDR570EP N‑Channel MOSFET from Vishay is engineered for high-performance power conversion and applications requiring low on-resistance and excellent switching characteristics. Rated for 150 V Drain-Source voltage and up to 175 °C junction temperature, this MOSFET is optimized for both efficiency and reliability, meeting Board Level Reliability (BLR) standards per IPC‑9701A.

Key Features

  • Low On-Resistance: Minimizes conduction losses for efficient power management.
  • Optimized Switching Performance: Excellent RDS‑Qg and RDS‑Qoss for fast, low-loss switching in SMPS designs.
  • High Power Density: Improves efficiency of power conversion and enables compact designs.
  • Board-Level Reliability (BLR): Meets IPC‑9701A standards for long-term reliability under stress conditions.

Applications

  • Synchronous rectification
  • Primary side switching
  • DC/DC converters
  • OR-ing and hot swap switches
  • Power supplies
  • Motor drive control
  • Battery management systems