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Low on-resistance, excellent switching performance, and board-level reliability for demanding power applications
The SiDR570EP N‑Channel MOSFET from Vishay is engineered for high-performance power conversion and applications requiring low on-resistance and excellent switching characteristics. Rated for 150 V Drain-Source voltage and up to 175 °C junction temperature, this MOSFET is optimized for both efficiency and reliability, meeting Board Level Reliability (BLR) standards per IPC‑9701A.
SiDR570EP Datasheet
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