text.skipToContent text.skipToNavigation

Hersteller Artikelnummer

RQ3P300BHTB1

MOSFETs Nch 100V 39A, HSMT8, Power MOSFET.

ECAD Modell:
Herstellername: ROHM
Standard Verpackungsart:
Product Variant Information section
Datencode:
Product Specification Section
ROHM RQ3P300BHTB1 - Technische Eigenschaften
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 15.5mΩ
Rated Power Dissipation: 2W
Qg Gate Charge: 18nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 10A
Turn-on Delay Time: 18ns
Turn-off Delay Time: 34ns
Rise Time: 20ns
Fall Time: 14ns
Gate Source Threshold: 4V
Input Capacitance: 1020pF
Montagemethode: Surface Mount
Pricing Section
Weltweiter Lagerbestand:
0
Deutschland:
0
6.000
Herstellerlagerbestand:Herstellerlagerbestand:
0
Standard-Hersteller-Lieferzeit:
21 Wochen
Mindestbestellmenge:
3000
Verpackungseinheit:
3000
Summe
1.290,00 $
USD
Menge
Internetpreis
3.000
0,43 $
6.000+
0,42 $
Product Variant Information section