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Référence fabricant
25LC160-I/SN
25LC160 Series 16 Kbit (2K x 8) 5.5 V SMT SPI Bus Serial EEPROM - SOIC-8
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| Nom du fabricant: | Microchip | ||||||||||
| Emballage standard: |
Product Variant Information section
Emballages disponiblesQté d'emballage(s) :100 par Tube Style d'emballage :SOIC-8 Méthode de montage :Surface Mount |
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| Code de date: | 2335 | ||||||||||
Microchip 25LC160-I/SN - Spécifications du produit
Informations de livraison:
Code HTS:
ECCN:
Informations PCN:
Description of Change: Qualification of Microchip Technology Gresham ? Fab 4 (GRTM) as a new fabrication location for the selected 24AA00xx, 24AA65, 24C00, 24C65, 24LC00, 24LC21xx, 24LC22A, 24LC65, 24LCS21A, 24LCS22A, 25AA040, 25AA080, 25AA160, 25C040, 25C080, 25C160, 25LC040, 25LC080, 25LC160, 93AA46, 93AA56, 93AA66, 93AA76, 93AA86, 93C46B, 93C56, 93C66xx, 93C76, 93C86, 93LC46xx, 93LC56, 93LC66xx, 93LC76 and 93LC86 device families of 77k technology available in various packages.Reason for Change: To improve manufacturability and on time delivery performance by qualifying a new fabrication location (GRTM - FAB 4), which is a Microchip-owned facility that offers significant expansion potential to better meet future client demand.
Statut du produit:
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https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=25LC160-I/SN&field4=Microchip&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--memory--RAM--eeprom--spi-interface-protocol/25lc160-i-sn-microchip-2720738
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https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=25LC160-I/SN&field4=Microchip&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--memory--RAM--eeprom--spi-interface-protocol/25lc160-i-sn-microchip-2720738
Microchip 25LC160-I/SN - Caractéristiques techniques
| Memory Density: | 16kb |
| Memory Organization: | 2 K x 8 |
| Supply Voltage-Nom: | 2.5V to 5.5V |
| Clock Frequency-Max: | 2MHz |
| Write Cycle Time-Max (tWC): | 5ms |
| Style d'emballage : | SOIC-8 |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
Features:
- Low-power CMOS Technology
- Max. Write Current: 3 mA
- Read Current: 500 μA typical
- Standby Current: 500 nA typical
- 2048 x 8-bit Organization
- 16 Byte Page
- Self-timed Erase and Write Cycles (5 ms max.)
- Block Write Protection
- Protect none, 1/4, 1/2 or all of array
- Built-in Write Protection
- Power-on/off data protection circuitry
- Write enable latch
- Write-protect pin
- Sequential Read
- High Reliability
- Endurance: 1 M cycles
- Data retention: > 200 years
- ESD protection: > 4000 V
Emballages disponibles
Qté d'emballage(s) :
100 par Tube
Style d'emballage :
SOIC-8
Méthode de montage :
Surface Mount