The 1,200 V level shift EiceDRIVER™ 6ED2230S12T from Infineon is a high-voltage IGBT gate driver which includes integrated bootstrap diodes and over-current protection. The driver has three independent high- and three low-side referenced output channels for driving three-phase applications such as motor drives.
Based on Infineon’s 1,200 V thin-film silicon-on-insulator technology, the device can withstand negative transient voltages of up to -100 V, making it robust and reliable enough for use in demanding industrial environments.
The 6ED2230S12T is ideal for driving either discrete IGBTs or IGBT modules. The device alone is capable of driving loads up to 6 kW, and can be used at higher power levels with the addition of an external buffer current driver. When this driver is combined with Infineon IGBT modules such as the EasyPACK™ 1B or EasyPACK 2B, designers can achieve a good balance between performance, small size, and cost.
The 6ED2230S12T provides a typical source current of 0.35 A, and a 0.65 A sink current. It is supplied in a 24-pin DSO package: this is a DSO-28 package with four pins removed to optimize the space saving provided by a small IC package while maintaining sufficient clearance distances.
Three integrated ultra-fast bootstrap diodes help designers to save board space and reduce bill-of-materials cost while simplifying their power-system design. Fault reporting, automatic fault clearance and an enable function are all provided on a single pin.
Part Number: EVAL-M1-6ED2230-B1
The EVAL-M1-6ED2230-B1 is a complete power-system evaluation board for motor drives with a power range up to 2 kW. It is based on the 6ED2230S12T gate driver and an FP15R12W1T4 EasyPIM™ 1B 1,200 V three-phase IGBT module.
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