STMicroelectronics — STD18N60M6 600 V MOSFET
STMicroelectronics

STMicroelectronics STD18N60M6 600 V MOSFET

New superjunction technology improves MOSFET efficiency in high-power converters

The STD18N60M6 is a 600 V, N-channel power MOSFET from STMicroelectronics which features low on-resistance to give superior efficiency in power-conversion systems.

 

The STD18N60M6 is capable of supplying a continuous output current of 13 A at a case temperature of 25°C. At 100°C, the maximum output current is 8.2 A. On-resistance is just 230 mΩ.

 

The STD18N60M6 power MOSFET takes advantage of the latest MDmesh M6 technology from ST, which implements improvements to the well-known MDmesh family of superjunction MOSFETs. The new M6 technology offers a reduction in on-resistance as a function of die area, combined with very effective switching behavior. The STD18N60M6 is also easy to drive.

STMicroelectronics — STD18N60M6 600 V MOSFET

Features

  • Low switching losses
  • Low gate input resistance
  • 100% avalanche tested
  • Zener diode protection

Applications

  • Switching power converters:
    • LLC converters
    • Boost PFC converters
  • Chargers
  • Power adapters
  • LED lighting
  • Telecoms equipment
  • Servers
  • Solar inverters

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