STMicroelectronics — STW24N60M6 600 V Power MOSFET

The STW24N60M6 from STMicroelectronics is a 600 V, N-channel power MOSFET which combines very low on-resistance, an optimized capacitance profile and low gate charge to enable power converters using resonant topologies to achieve higher efficiency and greater power density.

Based on the latest generation of ST’s MDmesh™ M6 superjunction technology, this power MOSFET is capable of supplying a continuous output current of 17 A at a case temperature of 25°C. Featuring on-resistance of just 162 mΩ and a total gate charge of 23 nC, the STW24N60M6 helps minimize power losses when switching at high frequency. The MOSFET also offers excellent switching behavior in both hard- and soft-switching topologies. 

The STW24N60M6 MOSFET is supplied in a standard TO-247 package. ST also supplies this product, with the same electrical characteristics, in other packages:

• STB24N60M6 in D2PAK
• STF24N60M6 in TO-220FP
• STI24N60M6 in I2PAK
• STO24N60M6 in TO-LL

The STL24N60M6 variant in a PowerFLAT 8×8 HV package has slightly higher on-resistance of 175 mΩ.