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onsemi | FDD7N20TM

Manufacturer Part #

FDD7N20TM

N-Channel 200 V 0.69 Ohm Surface Mount UniFET Mosfet TO-252-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2418
Product Specification Section
onsemi FDD7N20TM - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 0.69Ω
Rated Power Dissipation: 43|W
Qg Gate Charge: 5nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications

The FDD7N20TM is a 200 V,5A Surface Mount N-Channel Power Field Effect Transistor Available in a TO-252 Package. It works at a Operating Temperature ranging between -55 to +150 °C.

These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especically tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Features:

  • RDS(on) = 0.58 Ω ( Typ. ) @ VGS = 10 V, ID = 2.5 A
  • Low gate charge( Typ. 5 nC )
  • Low Crss ( Typ. 5 pF )
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • RoHS compliant
Pricing Section
Global Stock:
5,000
USA:
5,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$875.00
USD
Quantity
Unit Price
2,500
$0.35
5,000
$0.345
7,500
$0.34
12,500+
$0.335
Product Variant Information section