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Manufacturer Part #
IPB029N06N3GATMA1
Single N-Channel 60 V 2.9 mOhm 124 nC OptiMOS™ Power Mosfet - D2PAK
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:1000 per Reel Package Style:TO-263-3 (D2PAK) Mounting Method:Surface Mount |
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Infineon IPB029N06N3GATMA1 - Product Specification
Shipping Information:
HTS Code:
ECCN:
PCN Information:
Description of Change:Capacity extension of assembly and final test location to Infineon Technologies Tijuana, Mexico for dedicated products in TO263 package.Reason for Change:Extension of assembly and final test sites for additional capacity to ensure the continuity of supply and flexible manufacturing.
Part Status:
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Infineon IPB029N06N3GATMA1 - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 2.9mΩ |
| Rated Power Dissipation: | 188|W |
| Qg Gate Charge: | 124nC |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
1000 per Reel
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount