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Vishay | SI8816EDB-T2-E1

Manufacturer Part #

SI8816EDB-T2-E1

N-Channel 30 V 0.109 Ohm 2.4 nC Power Mosfet

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SI8816EDB-T2-E1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.109Ω
Rated Power Dissipation: 0.9|W
Qg Gate Charge: 2.4nC
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$393.00
USD
Quantity
Unit Price
3,000
$0.131
9,000
$0.129
12,000
$0.128
30,000
$0.126
45,000+
$0.124
Product Variant Information section