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Infineon Technologies | BSC060N10NS3GATMA1

Manufacturer Part #

BSC060N10NS3GATMA1

N-Channel 100 V 6 mOhm OptiMOS™3 Power-MOSFET - PG-TDSON-8

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies BSC060N10NS3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 6mΩ
Rated Power Dissipation: 125|W
Qg Gate Charge: 51nC
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
10,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
5000
Multiple Of:
5000
Total
$3,750.00
USD
Quantity
Unit Price
5,000+
$0.75
Product Variant Information section