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Infineon Technologies | IPD50P04P4L11ATMA2

Manufacturer Part #

IPD50P04P4L11ATMA2

OptiMOS P2 Series 40V 50A 10.6mΩ P‑Channel 58W Power Mosfet TO‑252‑3

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code: 2608
Product Specification Section
Infineon Technologies IPD50P04P4L11ATMA2 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 10.6mΩ
Rated Power Dissipation: 58W
Qg Gate Charge: 45nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 50A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 46ns
Rise Time: 9ns
Fall Time: 39ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.7V
Technology: OptiMOS
Input Capacitance: 3000pF
Series: OptiMOS-P2
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
2,500
USA:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,237.50
USD
Quantity
Unit Price
2,500
$0.495
5,000
$0.49
7,500
$0.485
12,500+
$0.475
Product Variant Information section