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Infineon | IRF8010STRLPBF

Manufacturer Part #

IRF8010STRLPBF

Single N-Channel 100 V 15 mOhm 120 nC HEXFET® Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2436
Product Specification Section
Infineon IRF8010STRLPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 15mΩ
Rated Power Dissipation: 260W
Qg Gate Charge: 81nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 80A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 61ns
Rise Time: 130ns
Fall Time: 120ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Si
Input Capacitance: 3830pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
800
Multiple Of:
800
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$872.00
USD
Quantity
Unit Price
800
$1.09
1,600
$1.08
2,400
$1.07
4,000+
$1.06
Product Variant Information section