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Infineon Technologies | IRFB4615PBF

Manufacturer Part #

IRFB4615PBF

Single N-Channel 150 V 39 mOhm 26 nC HEXFET® Power Mosfet - TO-220-3

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Mfr. Name: Infineon Technologies
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Product Specification Section
Infineon Technologies IRFB4615PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 39mΩ
Rated Power Dissipation: 144|W
Qg Gate Charge: 26nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Features & Applications

The  IRFB4615PBF is a 150V HEXFET® power MOSFET with ultra low gate charge (Qg) for industrial applications including Switch Mode Power Supplies (SMPS), uninterruptable power supplies (UPS), inverters and DC motor drives.

IR’s 150V MOSFETs offer up to 59 percent lower total gate charge than competing devices.

IR’s new 150V MOSFETs are optimized for fast switching circuits where switching losses are critical, and, therefore, are well suited as a primary switch for isolated DC-DC converters for telecom applications or driving light load efficiency in any advanced DC-DC applications.

The IRFB4615PBF is Single N-Channel 150 V 144 W MOSFET.  These devices are qualified to industrial grade and are moisture sensitivity level 1 (MSL1). The devices are available in TO220, offered lead free and are RoHS compliant.

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
1000
Multiple Of:
50
Total
$670.00
USD
Quantity
Unit Price
30
$0.705
125
$0.685
400
$0.67
1,250
$0.655
4,000+
$0.625
Product Variant Information section