Manufacturer Part #
25LC1024T-I/SM
25LC1024 Series 1 Mbit (128K x 8) 5.5 V SMT SPI Bus Serial EEPROM - SOIJ-8
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| Mfr. Name: | Microchip | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2100 per Reel Package Style:SOIJ-8 Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2506 | ||||||||||
Microchip 25LC1024T-I/SM - Product Specification
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Description of Change: Qualification of 66.9k wafer technology with QMI519 as a new die attach material and Au as a new wire material for selected 25AA1024, 25LC1024 and AT25M01 device families available in 8L SOIJ (.208in) package.Reason for Change: To improve manufacturability by qualifying 66.9k wafer technology with QMI519 as a new die attach material and Au as a new wire material.
Part Status:
Microchip 25LC1024T-I/SM - Technical Attributes
| Memory Density: | 1Mb |
| Memory Organization: | 128 K x 8 |
| Supply Voltage-Nom: | 2.5V to 5.5V |
| Clock Frequency-Max: | 20MHz |
| Write Cycle Time-Max (tWC): | 6ms |
| Package Style: | SOIJ-8 |
| Mounting Method: | Surface Mount |
Features & Applications
The 25LC1024 is a 1024 Kbit serial EEPROM memory with byte-level and pagelevel serial EEPROM functions. It also features Page, Sector and Chip erase functions typically associated with Flash-based products. These functions are not required for byte or page write operations. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled by a Chip Select (CS) input.
Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts. The 25LC1024 is available in standard packages including 8-lead PDIP and SOIJ, and advanced 8-lead DFN package. All devices are Pb-free
Features:
- 20 MHz max. Clock Speed
- Byte and Page-level Write Operations:
- 256 byte page
- 6 ms max. write cycle time
- No page or sector erase required
- Low-Power CMOS Technology:
- Max. Write current: 5 mA at 5.5 V, 20 MHz
- Read current: 7 mA at 5.5 V, 20 MHz
- Standby current: 1 μA at 2.5 V (Deep power-down)
- Electronic Signature for Device ID
- Self-Timed Erase and Write Cycles:
- Page Erase (6 ms max.)
- Sector Erase (10 ms max.)
- Chip Erase (10 ms max.)
- Sector Write Protection (32K byte/sector):
- Protect none, 1/4, 1/2 or all of array
- Built-In Write Protection:
- Power-on/off data protection circuitry
- Write enable latch
- Write-protect pin
- High Reliability:
- Endurance: 1 M erase/write cycles
- Data Retention: >200 years
- ESD Protection: >4000 V
- Temperature Ranges Supported:
- Pb-Free and RoHS Compliant
Available Packaging
Package Qty:
2100 per Reel
Package Style:
SOIJ-8
Mounting Method:
Surface Mount