Double-cooled MOSFETs increase power density in high-current designs

March 5, 2026

The SiDR626LDP and SiDR680ADP from Vishay are 60V and 80V N-channel MOSFETs based on fourth-generation TrenchFET technology featuring low on-resistance and gate charge in a PowerPAK® package.

The Vishay SiDR626LDP and SiDR680ADP MOSFETs enable the design of systems with tighter power budgets and thermal margins.

Both MOSFETs offer a low maximum on-resistance and high continuous drain current, making them particularly suitable for synchronous rectification and high-current motor drive applications. The MOSFETs are tuned for the lowest on-resistance x output capacitance figure of merit (FOM) to improve efficiency in high-frequency switching topologies.

Housed in a PowerPAK® SO-8DC package, the SiDR626LDP and SiDR680ADP allow for the attachment of a heatsink directly to the top of the leadless package. This feature significantly lowers the thermal resistance and allows for more effective thermal management in space-constrained designs.

Features

  • 150°C maximum operating temperature 
  • 100% tested for UIS and gate resistance 
  • ±100nA maximum gate-source leakage 

Applications

  • Motor drives 
  • Battery management systems 
  • Dc-dc converters 
CF_Vishay_SiDR626LDP

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