The SiRS5700DP 150 V N-channel MOSFET takes advantage of the fifth generation of Vishay TrenchFET® technology, offering a very low product of on-resistance and gate charge to give high efficiency in switching power-conversion applications.
The MOSFET is ideal for use in functions such as synchronous rectification, dc-dc conversion, ORing, and hot-swap switches. The SiRS5700DP complies with the requirements of the IPC-9701 specification to give more reliable temperature cycling.
The MOSFET is supplied in a PowerPAK® SO-8S package which features very low junction-to-case thermal resistance of 0.45°C/W, enabling it to carry a continuous drain current of up to 144 A. This enables power-system designers to achieve high power density, while providing a robust safe operating area (SOA) capability.
The standard 6 mm x 5 mm footprint of the package is compatible with MOSFETs housed in a PowerPAK SO-8 package.
