ROHM has launched the BM6GD11BFJ-LB, an isolated gate driver IC which offers the high-speed operation required to drive today’s fast-switching GaN high electron-mobility transistors (HEMTs).
The BM6GD11BFJ-LB is based on on-chip isolation technology developed by ROHM which reduces parasitic capacitance, enabling stable high-frequency operation at up to 2 MHz. Fast-switching operation not only contributes to greater energy efficiency, but also reduces the power circuit’s mounting area by enabling the use of smaller inductors and capacitors.
Safe signal transmission is achieved by isolating the gate driver IC from the control circuitry during switching operations that involve rapid cycles of voltage rises and falls. The BM6GD11BFJ-LB provides 2.5 kVrms of isolation.
The BM6GD11BFJ-LB also provides high common-mode transient immunity of 150 V/ns, 1.5 times higher than that of competing products, which helps to prevent malfunctions caused by the high slew rates typical of GaN HEMT switching. The minimum pulse width has also been reduced to just 65 ns, 33% less than that of conventional products.
