FTM / Connectivity / STMicroelectronics — RF5L15120CB4 RF MOSFET

STMicroelectronics — RF5L15120CB4 RF MOSFET

Connectivity

November 10, 2022
Connectivity
Issue 8 2022

MOSFET handles up to 120 W in RF power applications

RF5L15120CB4 from STMicroelectronics offers outstanding thermal characteristics

The RF5L15120CB4 from STMicroelectronics is a 120 W-rated LDMOS FET for use in TV broadcast equipment and other applications which call for operation at very high power.

The device is suitable for use in high-frequency circuits up to a maximum of 1.5 GHz. The RF5L15120CB4 can be used in Class AB/B and Class C equipment, and is suitable for all typical modulation formats. It complies with the European directive 2002/95/EC.

Supporting flexible design implementations, the RF5L15120CB4’s operation is guaranteed over a wide positive and negative gate-source voltage range of -8 V to +10 V.

Features

60% efficiency/20 dB power gain at 1 GHz
Integrated ESD protection
Excellent thermal stability
Low hot carrier injection (HCI) drift
200°C maximum junction temperature

Applications

Broadband commercial communications
TV broadcast equipment
Avionics
Industrial equipment

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