Vishay — SIHD690N60E Power MOSFET

The 600 V SIHD690N60E power MOSFET is in the fourth generation of the Vishay E series technology, which is notable for producing devices which have a combination of low on-resistance and low gate charge.

These E series MOSFETs can be used in power supplies and power converters to achieve low switching and conduction losses and high efficiency.

On-resistance is 0.6 Ω at a gate-source voltage of 10 V. Maximum gate charge is just 12 nC. The maximum gate-source threshold voltage is 5.0 V.

The SIHD690N60E is supplied in a TO-252 DPAK package which has a footprint of 6.0 mm x 6.5 mm, and is 2.3 mm high