Infineon has launched its new 400 V family of CoolSiC™ silicon carbide (SiC) MOSFETs, taking advantage of the second-generation (G2) CoolSiC technology introduced in 2024. This new MOSFET range was specially developed for use in the ac-dc converter stage of artificial intelligence (AI) servers.
The new family offers lower conduction and switching losses than 650 V SiC and silicon MOSFETs. When the 400 V G2 CoolSiC MOSFETs are used in a multi-level PFC circuit, the ac-dc converter stage of an AI server’s power supply unit can achieve power density of higher than 100 W/in³, and efficiency of up to 99.5%. This is 0.3 percentage points higher than solutions based on 650 V SiC MOSFETs.
The new portfolio consists of 10 400 V MOSFETs with on-resistance ranging from 11 mΩ to 45 mΩ. The MOSFETs are housed in Kelvin-source TOLL and D²PAK-7 packages with .XT package interconnect technology, and withstand harsh switching conditions, and are 100% avalanche tested.
The 400 V MOSFETs are particularly well able to cope with the power peaks and transients caused by sudden changes in the power drawn by the processor in an AI server. Both the .XT interconnect technology and a low and positive on-resistance/temperature coefficient enable excellent performance in applications operating at a high junction temperature.
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