The NCD57252 from onsemi is a high-current, dual-channel isolated IGBT gate driver which offers internal galvanic isolation from the input to each output, and functional isolation between the two output channels.
The gate driver is supplied in two package variants: the galvanic isolation it offers is either 2.5 kV or 5 kVrms depending on the package. The peak output current also depends on the chosen package: either ±6.5 A or ±3.5 A.
Accepting signals and a bias voltage in a range from 3.3 V to 20 V on the input side, the NCD57252 supplies up to a 32 V bias voltage on the output side. The driver handles complementary inputs, and provides separate pins for disable and dead-time control, for easier system design.
The NCD57252 supports various configurations and can be used as a dual low-side, a dual high-side, or a half-bridge driver.
Other gate drivers in the same family, the NCD57253 for silicon carbide MOSFETs, and the NCD57255 for IGBTs, share similar electrical characteristics to the NCD57252.
Part Number: NCD57252GEVB
The NCD57252 evaluation driver board enables evaluation of the NCD57252, a high-current gate driver which can directly drive two independent IGBTs in any configuration. The driver provides 5 kVrmss of internal galvanic isolation from input to each output and functional isolation between the two output channels.
The board can be externally connected to a power device to verify the real behavior of the NCD57252 in the system. It contains all the necessary peripheral components for direct connection to the power device.
The input bias is configured so that the power rails can be powered by many types of integrated dc-dc power supplies, or powered directly from an external power source. The PCB design is optimized to reduce loop areas and provide clear and simple measurement of all signals.
All the parts except optional dc-dc power sources are top-mounted, which allows for easy replacement. The board can serve as a reference design for future use.
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