The SCT025W120G3-4AG, part of the third generation of silicon carbide (SiC) MOSFETs from STMicroelectronics, combines very low on-resistance over the entire temperature range with low capacitances and high switching performance. Use of the SCT025W120G3-4AG enables power-system designers to increase the application’s operating frequency, raise energy efficiency, and reduce system size and weight compared to systems based on conventional silicon MOSFETs.
SiC MOSFETs also have a higher voltage rating relative to their die size compared to silicon alternatives, making the technology an excellent choice for electric vehicles (EVs) and EV rapid chargers.
The high-frequency switching capability of the SCT025W120G3-4AG enables the use of smaller passive components, producing more compact and lightweight designs for the electrical equipment in vehicles.
The packages in which ST supplies its third-generation SiC MOSFETs offer innovative design features, such as specially placed cooling tabs that simplify connection to base-plates and heat spreaders in EV applications.
