Panasonic — APVx111GVY PhotoMOS MOSFET Drivers
Panasonic

Panasonic APVx111GVY PhotoMOS MOSFET Drivers

Isolated MOSFET drivers support high-speed switching operation

Panasonic has introduced two high-power, optically isolated MOSFET drivers for use in industrial applications and data centers.

 

The new PhotoMOS® high-power drivers are capable of driving MOSFETs that have a high gate-source threshold voltage such as silicon carbide (SiC) MOSFETs at high switching frequencies.

 

These high-power MOSFET drivers housed in a compact SSOP package are available in two versions:

  • APV1111GVY has a drop-out voltage of 8.5 V and a short-circuit current of 45 µA
  • APV3111GVY has a drop-out voltage of 18 V and a short-circuit current of 12 µA
PhotoMOS relays can be used to replace a standard electro-mechanical relay, offering longer life, higher resistance to shock and vibration, and low on-resistance.

Features

  • 1,500 V isolation voltage
  • 60 mW maximum power dissipation
  • Turn-on times:
    • APV1111GVY – 0.1 ms
    • APV3111GVY – 0.4 ms
  • Turn-off times:
    • APV1111GVY – 0.1 ms
    • APV3111GVY – 0.04 ms

Applications

  • Battery management systems
  • Test and measurement equipment
  • Electrical power systems
  • Industrial equipment

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