ROHM has introduced a gate driver IC, the BD2311NVX-LB, which is optimized for gallium nitride (GaN) power switches, achieving gate drive speeds measured in nanoseconds.
The BD2311NVX-LB features a minimum gate-input pulse width of 1.25 ns. This enables the development of power systems that take full advantage of the fast switching capability of GaN transistors, a feature that contributes to the production of smaller and more energy efficient power supplies and power converters.
The BD2311NVX-LB is particularly well suited to use in power supplies that require high power density – data center and telecoms servers are a notable example. LiDAR ranging, used not only in autonomous and assisted driving but also for monitoring industrial equipment and infrastructure, also demands high-speed pulsed laser light, and this gate driver is ideal for this application as well.
As a single gate driver for a GaN high electron-mobility transistor (HEMT), the BD2311NVX-LB can supply a current of 7 A, and offers under-voltage lockout protection.
The BD2311NVX-LB is supplied in a 6-pin SON package which has a footprint of 2 mm x 2 mm.
Part supported: BD2311NVX-LB
Kit part number: REFLD002-1
The range of uses for LiDAR sensors is expanding to include not only autonomous driving, but also applications in the industrial and infrastructure fields. Improvements to LiDAR sensors are producing longer range and higher resolution.
In addition to improving the characteristics of the laser diode, it is necessary to drive the laser diode at higher speeds and power. The ROHM RLD90QZWx series is a line of 905 nm, high-power, narrow emission-width laser diodes.
The REFLD002-1 reference design includes the BD2311NVX-LB gate driver to drive the RLD90QZWx laser diode. The high speed of the BD2311NVX-LB contributes to improved LiDAR sensor range and resolution.
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