onsemi — NTBLS1D5N10MC MOSFET

The NTBLS power MOSFETs from onsemi feature a shield gate trench structure which produces low conduction and switching losses. A high-performance soft body diode helps the NTBLS devices to keep reverse-recovery losses to a very low level.

The NTBLS series consists of MOSFETs with breakdown voltage ratings from 80 V to 150 V. They are notable for their low on-resistance, low gate charge and low capacitance.

These characteristics enable designers to achieve high efficiency in motor driver circuits, industrial power supplies, and solar inverters.