onsemi — NTBLS1D5N10MC MOSFET
onsemi

onsemi NTBLS1D5N10MC MOSFET

Low-voltage power MOSFETs produce low reverse-recovery losses

The NTBLS power MOSFETs from onsemi feature a shield gate trench structure which produces low conduction and switching losses. A high-performance soft body diode helps the NTBLS devices to keep reverse-recovery losses to a very low level.

 

The NTBLS series consists of MOSFETs with breakdown voltage ratings from 80 V to 150 V. They are notable for their low on-resistance, low gate charge and low capacitance.

 

These characteristics enable designers to achieve high efficiency in motor driver circuits, industrial power supplies, and solar inverters.

Features

  • Low thermal resistance
  • 100% UIL tested
  • Low switching noise

Applications

  • Power tools
  • Battery-operated vacuum cleaners
  • Drones
  • Materials handling equipment
  • Battery management systems
  • Energy storage systems
  • Home automation
onsemi — NTBLS1D5N10MC MOSFET

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