Vishay supplies the SiR608DP, a 45 V power MOSFET which is suitable for use in low-voltage motor drives, as well as in power-conversion applications.
The 45 V MOSFETs from Vishay provide a safety margin which is 12.5% higher than comparable 40 V-rated products, while offering a figure of merit – the product of on-resistance and output charge – some 65% lower than that of typical 60 V devices.
The SiR608DP, a fourth-generation TrenchFET® MOSFET, is produced in an 8-lead PowerPAK® package which has a footprint of 6.15 mm x 5.15 mm. It enables efficient power conversion thanks to a combination of low on-resistance and low gate charge. Maximum on-resistance at a gate-source voltage of 10 V is 1.2 mΩ. Typical gate charge is just 50.5 nC.
Featuring a maximum gate-source threshold voltage of 2.3 V, the SiR608DP is easy to drive.