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Manufacturer Part #
MJD112-1G
MJD Series 100 V 2 A Through Hole NPN Complementary Darlington Power Transistor
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:75 per Tube Package Style:TO-251 (IPAK) Mounting Method:Through Hole |
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| Date Code: | 2305 | ||||||||||
Product Specification Section
onsemi MJD112-1G - Product Specification
Shipping Information:
Item cannot ship to certain countries.
See List
Item cannot ship to following countries:
N/A
HTS Code:
N/A
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
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onsemi MJD112-1G - Technical Attributes
Attributes Table
| Polarity: | NPN |
| Type: | Darlington |
| CE Voltage-Max: | 100V |
| Collector Current Max: | 2A |
| Power Dissipation-Tot: | 1.75W |
| DC Current Gain-Min: | 500 |
| Package Style: | TO-251 (IPAK) |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
73
USA:
73
On Order:
0
Factory Lead Time:
29 Weeks
Quantity
Unit Price
40
$0.57
125
$0.56
300
$0.55
750
$0.535
2,000+
$0.515
Product Variant Information section
Available Packaging
Package Qty:
75 per Tube
Package Style:
TO-251 (IPAK)
Mounting Method:
Through Hole