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STMicroelectronics | STGY40NC60VD

Manufacturer Part #

STGY40NC60VD

STGY40NC60VD Series 600 V 50 A N-Channel Very Fast PowerMESH IGBT - Max247

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Mfr. Name: STMicroelectronics
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Product Variant Information section
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Product Specification Section
STMicroelectronics STGY40NC60VD - Technical Attributes
Attributes Table
CE Voltage-Max: 600V
Collector Current @ 25C: 80A
Power Dissipation-Tot: 260W
Gate - Emitter Voltage: 20V
Collector - Emitter Saturation Voltage: 1.9V
Turn-on Delay Time: 43ns
Turn-off Delay Time: 140ns
Qg Gate Charge: 214nC
Reverse Recovery Time-Max: 44ns
Leakage Current: 100nA
Input Capacitance: 4550pF
Thermal Resistance: 50°C/W
Operating Temp Range: -55°C to +150°C
No of Terminals: 3
Package Style:  MAX-247
Mounting Method: Through Hole
Features & Applications

The STGY40NC60VD is a N-Channel 600 V Very fast powerMESH Insulated gate bipolar transistor with outstanding performances.

The suffix “V” identifies a family optimized for very high frequency applications.

Features:

  • High current capability
  • High frequency operation up to 50 kHz
  • Low CRES / CIES ratio (no cross-conduction susceptibility)
  • Very soft ultra fast recovery antiparallel diode

Applications:

  • High frequency inverters, UPS
  • SMPS and PFC in both hard switch and resonant topologies
  • Motor drivers
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
600
Multiple Of:
600
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Total
$1,836.00
USD
Quantity
Unit Price
600
$3.06
1,200
$3.03
1,800
$3.02
2,400
$3.01
3,000+
$2.98
Product Variant Information section