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Infineon Technologies | BSC098N10NS5ATMA1

Manufacturer Part #

BSC098N10NS5ATMA1

Single N-Channel 100 V 9.8 mOhm 22 nC OptiMOS™ Power Mosfet - TDSON-8

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code: 2543
Product Specification Section
Infineon Technologies BSC098N10NS5ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 9.8mΩ
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 22nC
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
55,000
USA:
55,000
On Order:Order inventroy details
355,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$2,525.00
USD
Quantity
Unit Price
5,000
$0.505
10,000
$0.495
15,000+
$0.49
Product Variant Information section