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Manufacturer Part #

SQJQ900E-T1_GE3

Dual N-Channel 40 V 3.9 mOhm 75 W SMT Automotive Power Mosfet - PowerPAK-8x8L-Dual

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SQJQ900E-T1_GE3 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 3.9mΩ
Rated Power Dissipation: 75W
Qg Gate Charge: 85nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 100A
Turn-on Delay Time: 14ns
Turn-off Delay Time: 30ns
Rise Time: 7.5ns
Fall Time: 14ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2V
Input Capacitance: 4695pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
2000
Multiple Of:
2000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$8,640.00
USD
Quantity
Unit Price
2,000+
$4.32
Product Variant Information section