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STMicroelectronics | STU13N60M2

Manufacturer Part #

STU13N60M2

N-Channel 600 V 0.39 Ohm Through Hole MDmesh M2 II Plus Mosfet - IPAK

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STU13N60M2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.38Ω
Rated Power Dissipation: 110W
Qg Gate Charge: 17nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 11A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 41ns
Rise Time: 10ns
Fall Time: 9.5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: MDmesh
Input Capacitance: 580pF
Package Style:  IPAK
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$2,010.00
USD
Quantity
Unit Price
3,000
$0.67
6,000
$0.66
9,000
$0.655
12,000+
$0.65
Product Variant Information section