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Référence fabricant
SQJ469EP-T1_GE3
SQJ469EP Series 80 V 32 A 25 mOhm Automotive P-Channel MOSFET - PowerPAK® SO-8
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| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :3000 par Reel Style d'emballage :POWERPAK-SO-8L Méthode de montage :Surface Mount | ||||||||||
| Code de date: | |||||||||||
Vishay SQJ469EP-T1_GE3 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Description of Change: In order to increase front end capacity, Vishay is transferring some production of select part numbers to Vishay Newport Limited located in Newport, Wales UK. A list of affected parts and their Newport counterparts can be found on page 3 of this PCN.Reason for Change: Capacity Expansion
Description:No Physical, Process, or Location Changes We want to emphasize that products continue to be manufactured at the same locations, using the same equipment, materials, packaging, and process steps as before. There have been no changes to any aspect of the production process or sites involved.BackgroundThis alignment is part of a global initiative at Vishay to ensure consistent representation of CoO information across all divisions, based on international and national regulations, as well as World Trade Organization guidelines.Please NoteSome customers may have already noticed changes in the CoO information on documentation accompanying recent product deliveries. As part of this ongoing initiative, updates to the CoO may continue to appear over time in product documentation, where applicable. These changes align with the updated approach and do not reflect any physical changes to the products themselves.
Description of Change: As part of Vishay Siliconix commitment to Quality, we would like to extend to you a courtesy advisory notification of a datasheet revision for SQJ469EP (Doc #65936 Rev D attached). There is no change to the materials or processes used in the manufacture of this part.The changes per this Advisory reflect updates as follows:Removed the following: superscript ?d? from AEC-Q101 Qualified feature, superscript ?b? from Maximum Power Dissipation rating, and ?d.Parametric verification ongoing? note.Renamed: superscript ?e, f? to ?d, e? of Soldering Recommendations rating, superscript ?e? to ?d? and ?f? to ?e? of Notes.PIN Revision 1 Update: Added Soldering Recommendations which was missing from Rev C datasheetReason for Change: Datasheet Revision
Description of Change: As part of Vishay Siliconix commitment to Quality, we would like to extend to you a courtesy advisory notification of a datasheet revision for SQJ469EP (Doc #65936 Rev C attached). There is no change to the materials or processes used in the manufacture of this part.The changes per this Advisory reflect updates as follows:Removed the following: superscript ?d? from AEC-Q101 Qualified feature, superscript ?b? from Maximum Power Dissipation rating, and ?d.Parametric verification ongoing? note.Renamed: superscript ?e, f? to ?d, e? of Soldering Recommendations rating, superscript ?e? to ?d? and ?f? to ?e? of Notes.Reason for Change:Datasheet Revision
PI Material Improved Definition Process Change May 2023Description of Change: Change of Polyimide material from DUR 116A to LTC 9320 using a photo defined process. There will be nolimitation in performance or reliability. Please note this is the same process change as prior PCN-SIL-0112022 (PI Material ImprovedDefinition Process Change) that you may have received in June 2022. This PCN represents the next set of parts to receive the new PI material. If you have already approved the prior PCN, the qualification data and process change for these parts are exactly the same and your expedited approval of the PCN is requested.Classification of Change: Capacity ExpansionVishay Brand(S): Vishay SiliconixTime Schedule:Start Shipment Date: Mon Sep 25, 2023
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SQJ469EP-T1_GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--mosfets/sqj469ep-t1-ge3-vishay-8080436
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SQJ469EP-T1_GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--mosfets/sqj469ep-t1-ge3-vishay-8080436
Vishay SQJ469EP-T1_GE3 - Caractéristiques techniques
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 80V |
| Drain-Source On Resistance-Max: | 25mΩ |
| Rated Power Dissipation: | 100|W |
| Qg Gate Charge: | 101nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 32A |
| Turn-on Delay Time: | 16ns |
| Turn-off Delay Time: | 150ns |
| Rise Time: | 16ns |
| Fall Time: | 40ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 2V |
| Height - Max: | 1.14mm |
| Length: | 4.9mm |
| Input Capacitance: | 4250pF |
| Style d'emballage : | POWERPAK-SO-8L |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Style d'emballage :
POWERPAK-SO-8L
Méthode de montage :
Surface Mount