The SCT011HU75G3AG is an automotive-grade silicon carbide (SiC) MOSFET rated at 750V and 110A, with an ultra-low typical on-resistance of just 11mΩ. Leveraging 3rd-generation silicon carbide (SiC) technology from STMicroelectronics achieves exceptionally low conduction losses and supports high-frequency switching in demanding EV, renewable energy, and industrial power converters.
In a specific type of surface-mount power component HU3PAK package developed by STMicroelectronics for high-performance power semiconductors, the SCT011HU75G3AG maintains low drain-to-source on-resistance across the full operating temperature range. The low capacitances and fast switching characteristics minimize switching losses, enabling efficient operation at high switching frequencies. The intrinsic fast body diode allows reliable bidirectional current flow for applications like bidirectional chargers, such as STMicroelectronics’ 11 kW STEVAL-11BID1KCB design board and inverter systems.
The HU3PAK package includes a dedicated driver-source connection to reduce parasitic inductance and optimize switching performance. SCT011HU75G3AG is ensuring automotive-grade reliability for electric vehicle power stages and other high-stress environments.
Part Number: STEVAL-11BID1KCB
The STEVAL-11BID1KCB is an 11kW bidirectional battery charger and represents a complete solution for high-voltage charging in both the industrial and automotive fields.
The board uses two control boards for the PFC and dc-dc stages respectively. The control board is based on the STM32G474RE microcontroller. The PFC stage operating frequency is 70kHz. The dc-dc stage is operating at a fixed switching frequency of 100kHz. A peak system efficiency of 96% was achieved for the design.
