ROHM has introduced three N-channel power MOSFETs featuring low on-resistance and a wide SOA which help to improve efficiency and reliability in server power circuits and artificial intelligence (AI) cloud computers.
The new EcoMOS™ product line-up includes three products:
All three MOSFETs are housed in a new DFN5060-8S package which has a footprint of 5 mm x 6 mm. This new package increases the area of the die by approximately 65% compared to MOSFETs in a conventional 5 mm x 6 mm HSOP8 package. This larger die produces both low on-resistance and a wider SOA. The RS7E200BG features on-resistance of 0.53 mΩ, and the RS7N200BH, 1.7 mΩ, both at a gate-source voltage of 10 V.
The wide SOA is valuable in servers equipped with hot-swap capability, which allow for the replacement and maintenance of internal boards and storage devices while powered on, and which experience a high inrush current during hot-swap events. The 30 V RS7E200BG achieves an SOA tolerance of over 70 A for a pulse width of 1 ms at a drain-source voltage of 12 V, twice that of MOSFETs in the conventional HSOP8 package.
