The Infineon F3L8MXTR12C2M2Q_H11 module contains 12 SiC MOSFETs arranged for efficient operation in high-frequency switching applications including dc-dc converters and chargers. The design switches up to 1,200V, supporting continuous drain current up to 95A at 175°C.
The CoolSiC™ MOSFET structure in the module, which has low on-resistance of 16.8mΩ at 175°C, minimizes conduction losses. Switching losses in high-frequency operation are low thanks to a control scheme which ensures operation in optimized switching conditions with the shortest possible dead times.
The F3L8MXTR12C2M2Q_H11 also benefits from an improved interconnection technology called .XT extended lifetime, which offers more than 20 times better power cycling capability than standard assembly technologies. In addition, the module offers a large reverse-bias safe operating area of 2.5 times the nominal current.
The module is housed in a rugged press-fit enclosure for solder-free mounting, and includes a pre-applied thermal interface material to ensure consistent thermal coupling. Electrical isolation of 3kVrms and a comparative tracking index above 600 support use in high-voltage systems and industrial environments. An integrated NTC element enables thermal monitoring.
