The onsemi NVBG075N065SC1 SiC MOSFET’s low total gate charge of 59nC and low output capacitance of 109pF reduce both switching loss and parasitic inductance in the high-frequency power circuits found in electric vehicle on-board chargers and auxiliary converters.
A dedicated driver-source connection for the gate loop helps to keep transitions predictable. The MOSFET’s D2PAK-7L package, which has low thermal resistance between junction and case, assists heat extraction to the PCB or heat-sink, enabling designers to realize compact mechanical designs at high ambient temperatures.
In vehicle power circuits migrating to higher electrification levels, the transistor supports smaller, lighter conversion hardware whilst meeting thermal and reliability constraints. The reverse-conduction and reverse-recovery performance, which benefits from the superior characteristics of SiC material compared to silicon, make the NVBG075N065SC1 particularly well suited to converters which implement hard commutation or synchronous rectification, and allow for the diode-less bridge and totem-pole stages used in modern on-board chargers and dc-dc converters.
