The Vishay SiEH4800EW MOSFET, which offers low on-resistance of 0.88mΩ at 10V and junction-to-case thermal resistance of 0.36°C/W, enables the design of systems with tighter power budgets and thermal margins. Featuring a low gate charge of 140nC, the SiEH4800EW is particularly suitable for synchronous rectification and O-ring applications.
Housed in a compact PowerPAK 8mm x 8mm package with a height of just 1.0mm, the SiEH4800EW occupies 50% less PCB space than MOSFETs in a TO-263 package. It features a fused lead design with a source pad solderable area of 3.35mm2, four times larger than typical. This lowers the current density between the MOSFET and the PCB, which reduces the risk of electro-migration and helps to increase reliability.
