The latest 80 V and 100 V NextPower MOSFETs from Nexperia are suitable for applications requiring high-efficiency switching and excellent reliability.
The 100 V PSMN3R9-100YSF and 80 V PSMN3R5-80YSF MOSFETs feature substantially lower on-resistance than the previous generation of Nexperia MOSFETs, and are housed in a footprint-compatible LFPAK56E package.
NextPower 80 V/100 V MOSFETs also offer an improved body diode which features low maximum source-drain voltage of 1 V. Reverse-recovery charge is as low as 44 nC in the PSMN3R9-100YSF and 25 nC in the PSMN3R5-80YSF. Low reverse-recovery charge reduces spiking and EMI emissions, and contributes to improved switching efficiency in high-performance power converters.
NextPower 80 V/100 V MOSFETs enable power-system designers to reduce conduction losses and improve efficiency in a wide range of power-switching applications.
For functions such as hot-swap, soft start and inrush control, which require a wide safe operating area (SOA), Nexperia also offers ASFET versions of these MOSFETs. These PSMN4R8-100YSE and PSMN4R2-80YSE parts feature an enhanced SOA for robust linear-mode operation.
The PSMN3R9-100YSF and PSMN3R5-80YSF are the first devices to be manufactured by Nexperia at its new 8-inch wafer production line in Manchester, UK. This new production line is part of Nexperia’s effort to increase global manufacturing capacity and improve availability of essential semiconductor devices.
Share This
Get access to the latest product information, technical analysis, design notes and more
