onsemi has extended its EliteSiC range of silicon carbide (SiC) power components and modules with a new 650 V MOSFET, the NTBG023N065M3S, which offers low on-resistance and fast switching capability up to a maximum operating temperature of 175°C.
The SiC material provides superior switching performance and higher reliability than silicon MOSFETs. In addition, low on-resistance and a relatively small die size produce low capacitance and gate charge. The resulting benefits for power-system designs include very high efficiency, faster switching frequency, increased power density, lower EMI, and smaller size and weight.
The NTBG023N065M3S MOSFET features on-resistance of 22.7 mΩ, with a typical gate-threshold voltage of 2.62 V. Output capacitance is just 144 pF. The fast and efficient switching capability of SiC MOSFETs is well represented in the NTBG023N065M3S, which produces a rise time of 17.2 ns and a fall time of 11.3 ns, and total switching loss of 108 µJ.
