The DGD1003 from Diodes Incorporated is a high-voltage, high-speed gate driver capable of driving twin N-channel MOSFETs or IGBTs in a half-bridge configuration. Supporting high-speed switching operations, the DGD1003 features a typical turn-on time of just 680ns, and a turn-off time of 150ns.
The logic inputs for triggering the DGD1003 are compatible with standard TTL and CMOS levels down to 3.3V, providing a simple interface to a microcontroller or other host device. The driver’s high side can switch to 150V in a bootstrap operation.
The output from the DGD1003 driver IC features high pulse-current buffers to minimize cross-conduction. The IC’s output current capability is 290mA at the source and 600mA at the sink.
The DGD1003 has a fixed internal deadtime of 420ns to protect the MOSFETs in the half-bridge.
The driver is supplied in a DFN package with a footprint of 3.5mm x 3.0mm.