Nexperia continues to extend its portfolio of AEC-Q101 qualified power MOSFETs that use robust Trench 9 low-voltage superjunction technology. The Nexperia ‘BUK’ family of 40V MOSFETs exceeds the requirements of the AEC-Q101 standard by as much as two times on key reliability tests including temperature cycling, high-temperature gate bias, high-temperature reverse bias, and intermittent operating life.
Suitable for a wide range of automotive applications, the BUK Trench 9 MOSFETs benefit from Nexperia’s advanced packaging capability to produce lower on-resistance, and enable circuit designers to achieve higher power density.
For instance, the LFPAK88 package features an optimized lead frame and package design which result in an improvement in on-resistance and power density of as much as 53%. This enables the Trench 9 LFPAK88 MOSFETs to be used in applications which could previously only have been realized with devices in a D²PAK or D²PAK-7 package, giving manufacturers substantial savings in board area.
Nexperia’s superjunction technology also offers better avalanche and Safe Operating Area (SOA) characteristics than competing technologies, ensuring that the MOSFETs survive even in fault conditions. In fact, most suppliers do not recommend TrenchMOS technologies for use in single-shot or repetitive avalanche applications. The Trench 9 MOSFETs, however, offer extremely good single-shot and repetitive avalanche performance which is documented in the products’ datasheet.
The space savings and increased power density provided by the BUK family of MOSFETs are particularly useful in safety-critical systems, such as power steering and braking, which require dual redundancy. By using the power-dense Trench 9 LFPAK family, designers can add the redundant power components to a module without increasing the size of the PCB or module.