Infineon — OptiMOS™ 5 Linear FET 2 MOSFET

The new Infineon OptiMOS 5 Linear FET 2 MOSFET provides the ideal combination of the low on-resistance of a trench MOSFET with the wide SOA of a classic planar MOSFET.  

In hot-swap applications, this allows for robust linear-mode operation to limit inrush current, protecting the load and adjacent systems. The SOA of the new OptiMOS Linear FET 2 is wider at high operating temperatures than the previous generation, the OptiMOS Linear FET, giving more SOA headroom in linear mode.  

Gate leakage current is also 50 times lower. This allows for more MOSFETs to be connected in parallel to a controller, reducing bill-of-materials cost. Combined with best-in-class on-resistance, these features enable power-system designers to achieve high power density and high efficiency while meeting the inrush current protection requirements of hot-swap systems. 

The wide SOA of the OptiMOS 5 Linear FET 2 is also valuable for battery protection in the event of a short-circuit: high current is turned off quickly by the MOSFET to prevent system failure. The higher SOA of the OptiMOS 5 Linear FET 2 compared to the previous generation allows each MOSFET to withstand higher short-circuit currents.  

The OptiMOS 5 Linear FET 2 also features improved current sharing, a benefit of its optimized transfer characteristic. This makes for more even distribution of current during switching in a short-circuit event.  

The product is available in two versions:  

• IPT017N10NM5LF2 with on-resistance of 1.7 mΩ and a current capability of 321 A 

• IPT023N10NM5LF2 with on-resistance of 2.3 mΩ and a current capability of 243 A