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Infineon | IRL2505PBF

Manufacturer Part #

IRL2505PBF

Single N-Channel 55 V 0.008 Ohm 130 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRL2505PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 0.008Ω
Rated Power Dissipation: 200W
Qg Gate Charge: 130nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 104A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 43ns
Rise Time: 160ns
Fall Time: 84ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2V
Input Capacitance: 5000pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
1000
Multiple Of:
50
Total
$885.00
USD
Quantity
Unit Price
50
$0.935
200
$0.91
1,000
$0.885
2,000
$0.87
6,250+
$0.84
Product Variant Information section