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Référence fabricant
SIHFBE30S-GE3
Single N-Channel 800 V 3 Ohm 78 nC 125 W Silicon SMT Mosfet - TO-263-3
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| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :1000 par Tube Style d'emballage :TO-263-3 (D2PAK) Méthode de montage :Surface Mount | ||||||||||
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Vishay SIHFBE30S-GE3 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Description:No Physical, Process, or Location Changes We want to emphasize that products continue to be manufactured at the same locations, using the same equipment, materials, packaging, and process steps as before. There have been no changes to any aspect of the production process or sites involved.BackgroundThis alignment is part of a global initiative at Vishay to ensure consistent representation of CoO information across all divisions, based on international and national regulations, as well as World Trade Organization guidelines.Please NoteSome customers may have already noticed changes in the CoO information on documentation accompanying recent product deliveries. As part of this ongoing initiative, updates to the CoO may continue to appear over time in product documentation, where applicable. These changes align with the updated approach and do not reflect any physical changes to the products themselves.
Description of Change: Vishay Siliconix announces that we are going to transfer foundry capacity gradually (phase by phase) to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel.Reason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelStart Shipment Date: Monday September 1, 2025
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SIHFBE30S-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--mosfets/sihfbe30s-ge3-vishay-4068790
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SIHFBE30S-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--mosfets/sihfbe30s-ge3-vishay-4068790
Vishay SIHFBE30S-GE3 - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 800V |
| Drain-Source On Resistance-Max: | 3Ω |
| Rated Power Dissipation: | 125W |
| Qg Gate Charge: | 78nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 4.1A |
| Turn-on Delay Time: | 12ns |
| Turn-off Delay Time: | 82ns |
| Rise Time: | 33ns |
| Fall Time: | 30ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4V |
| Technology: | Si |
| Height - Max: | 4.83mm |
| Length: | 10.67mm |
| Input Capacitance: | 1300pF |
| Style d'emballage : | TO-263-3 (D2PAK) |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
1000 par Tube
Style d'emballage :
TO-263-3 (D2PAK)
Méthode de montage :
Surface Mount