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Manufacturer Part #

BSC076N06NS3GATMA1

Single N-Channel 60 V 7.6 mOhm 50 nC OptiMOS™ Power Mosfet - TDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon BSC076N06NS3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 7.6mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 37nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 14A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 20ns
Rise Time: 40ns
Fall Time: 5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 3000pF
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$1,900.00
USD
Quantity
Unit Price
5,000
$0.38
10,000
$0.375
15,000+
$0.37
Product Variant Information section