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Manufacturer Part #

SIS890DN-T1-GE3

N-Channel 100 V 23.5 mOhm 52 W TrenchFET Power Mosfet - PowerPAK-1212-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SIS890DN-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 23.5mΩ
Rated Power Dissipation: 3.7W
Qg Gate Charge: 19.1nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 8.8A
Turn-on Delay Time: 9ns
Turn-off Delay Time: 16ns
Rise Time: 10ns
Fall Time: 8ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Input Capacitance: 802pF
Package Style:  POWERPAK-1212-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Germany:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$1,890.00
USD
Quantity
Unit Price
3,000+
$0.63
Product Variant Information section