The new VS-3C SiC merged-pin Schottky diodes from Vishay, which support peak repetitive reverse voltages of 650 V or 1,200 V, are ideal for power applications which combine high performance and robust operation. The Schottky diodes can operate in circuits for ac-dc power factor correction, dc-dc ultra high-frequency output rectification, and in full-bridge power supplies or LLC converters.
These third-generation Schottky diodes feature improved thin-wafer technology for more efficient hard switching over a junction-temperature range of -55°C to 175°C. This makes the VS-3C family a forward-thinking solution in applications suffering from reverse-recovery problems in silicon devices. A positive forward-voltage temperature coefficient also enables easy paralleling.
The VS-3C are available in a variety of package types. These include two-lead and three-lead TO-247AD, two-lead TO-220AC and D2PAK options. A two-lead SlimDPAK or SMPD package with a height of just 1.3 mm is also available for space-constrained designs.
The VS-3C SiC Schottky diodes support a continuous forward current of 4 A, 5 A, 6 A, 8 A, 10 A, 12 A, 15 A, 16 A, 20 A, or 30 A for devices in two-lead packages. Three-lead TO-247AD packages with a common cathode are available for dual 5 A, 8 A, 10 A, 15 A, or 20 A outputs.
